Технічний опис IXTT30N50P Ixys Corporation
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns, Mounting: SMD, Polarisation: unipolar, Kind of package: tube, Case: TO268, Gate charge: 70nC, Kind of channel: enhanced, Reverse recovery time: 400ns, Drain-source voltage: 500V, Drain current: 30A, On-state resistance: 0.2Ω, Type of transistor: N-MOSFET, Power dissipation: 460W, Features of semiconductor devices: standard power mosfet, кількість в упаковці: 1 шт.
Інші пропозиції IXTT30N50P
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IXTT30N50P | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 70nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 460W Features of semiconductor devices: standard power mosfet кількість в упаковці: 1 шт |
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IXTT30N50P | Виробник : IXYS |
Description: MOSFET N-CH 500V 30A TO268 |
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IXTT30N50P | Виробник : IXYS |
MOSFET 30.0 Amps 500 V 0.2 Ohm Rds |
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IXTT30N50P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 70nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 460W Features of semiconductor devices: standard power mosfet |
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