на замовлення 525 шт:
термін постачання 343-352 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1499.35 грн |
| 10+ | 1477.16 грн |
| 30+ | 1283.82 грн |
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Технічний опис IXTT30N60L2 IXYS
Description: MOSFET N-CH 600V 30A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V.
Інші пропозиції IXTT30N60L2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXTT30N60L2 | Виробник : Littelfuse |
 Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) TO-268 |
товар відсутній |
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IXTT30N60L2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268 Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 335nC Technology: Linear L2™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 710ns Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 540W кількість в упаковці: 1 шт |
товар відсутній |
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IXTT30N60L2 | Виробник : IXYS |
Description: MOSFET N-CH 600V 30A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
товар відсутній |
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IXTT30N60L2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268 Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 335nC Technology: Linear L2™ Kind of channel: enhanced Gate-source voltage: ±20V Reverse recovery time: 710ns Drain-source voltage: 600V Drain current: 30A On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 540W |
товар відсутній |