IXTT30N60P IXYS
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
кількість в упаковці: 1 шт
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Технічний опис IXTT30N60P IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 30A, Power dissipation: 540W, Case: TO268, On-state resistance: 0.24Ω, Mounting: SMD, Gate charge: 82nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: standard power mosfet, Reverse recovery time: 0.5µs, кількість в упаковці: 1 шт.
Інші пропозиції IXTT30N60P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTT30N60P | Виробник : IXYS | Description: MOSFET N-CH 600V 30A TO-268 D3 |
товар відсутній |
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IXTT30N60P | Виробник : IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds |
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IXTT30N60P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 540W Case: TO268 On-state resistance: 0.24Ω Mounting: SMD Gate charge: 82nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
товар відсутній |