Технічний опис IXTT440N055T2 Littelfuse
Description: MOSFET N-CH 55V 440A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 440A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V, Power Dissipation (Max): 1000W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V.
Інші пропозиції IXTT440N055T2
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IXTT440N055T2 | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 440A Power dissipation: 1kW Case: TO268 On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 405nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns кількість в упаковці: 1 шт |
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IXTT440N055T2 | Виробник : IXYS |
Description: MOSFET N-CH 55V 440A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 1000W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 405 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25000 pF @ 25 V |
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IXTT440N055T2 | Виробник : IXYS |
MOSFET N-Channel Trench Gate TrenchT2 MOSFET |
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IXTT440N055T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 440A; 1000W; TO268; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 440A Power dissipation: 1kW Case: TO268 On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 405nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 76ns |
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