IXTT50P10 IXYS
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
| Кількість | Ціна |
|---|---|
| 1+ | 686.46 грн |
| 3+ | 563.78 грн |
| 10+ | 506.21 грн |
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Технічний опис IXTT50P10 IXYS
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -50A, Gate charge: 0.14µC, Reverse recovery time: 180ns, On-state resistance: 55mΩ, Gate-source voltage: ±20V, Power dissipation: 300W, Kind of package: tube, Case: TO268.
