Технічний опис IXTT52N30P Littelfuse
Description: MOSFET N-CH 300V 52A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V.
Інші пропозиції IXTT52N30P
| Фото | Назва | Виробник | Інформація |
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IXTT52N30P | Виробник : Littelfuse |
 Trans MOSFET N-CH 300V 52A 3-Pin(2+Tab) TO-268 |
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IXTT52N30P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 52A Power dissipation: 400W Case: TO268 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
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IXTT52N30P | Виробник : IXYS |
Description: MOSFET N-CH 300V 52A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V |
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IXTT52N30P | Виробник : IXYS |
MOSFET 52 Amps 300V 0.066 Rds |
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IXTT52N30P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO268 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 52A Power dissipation: 400W Case: TO268 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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