на замовлення 23 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1497.79 грн |
| 10+ | 1300.58 грн |
| 30+ | 1114.25 грн |
| 60+ | 1070.18 грн |
| 120+ | 978.05 грн |
| 270+ | 956.69 грн |
| 510+ | 955.35 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTT60N20L2 IXYS
Description: MOSFET N-CH 200V 60A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V.
Інші пропозиції IXTT60N20L2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXTT60N20L2 | Виробник : Littelfuse |
 Trans MOSFET N-CH 200V 60A 3-Pin(2+Tab) TO-268 |
товар відсутній |
|
 |
IXTT60N20L2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Drain current: 60A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 540W Features of semiconductor devices: linear power mosfet Gate charge: 255nC Kind of channel: enhanced Reverse recovery time: 330ns Drain-source voltage: 200V кількість в упаковці: 1 шт |
товар відсутній |
|
 |
IXTT60N20L2 | Виробник : IXYS |
Description: MOSFET N-CH 200V 60A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
товар відсутній |
|
|
|
IXTT60N20L2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Drain current: 60A On-state resistance: 45mΩ Type of transistor: N-MOSFET Power dissipation: 540W Features of semiconductor devices: linear power mosfet Gate charge: 255nC Kind of channel: enhanced Reverse recovery time: 330ns Drain-source voltage: 200V |
товар відсутній |