на замовлення 17 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 940.04 грн |
| 10+ | 816.61 грн |
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Технічний опис IXTT88N30P IXYS
Description: MOSFET N-CH 300V 88A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.
Інші пропозиції IXTT88N30P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXTT88N30P | Виробник : Littelfuse |
 Trans MOSFET N-CH 300V 88A 3-Pin(2+Tab) TO-268 |
товар відсутній |
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IXTT88N30P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO268 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTT88N30P | Виробник : IXYS |
Description: MOSFET N-CH 300V 88A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V |
товар відсутній |
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IXTT88N30P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 88A Power dissipation: 600W Case: TO268 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
товар відсутній |