IXTX17N120L IXYS
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 17A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.83µs
кількість в упаковці: 1 шт
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Технічний опис IXTX17N120L IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 17A, Power dissipation: 700W, Case: PLUS247™, On-state resistance: 0.9Ω, Mounting: THT, Gate charge: 155nC, Kind of package: tube, Kind of channel: enhanced, Features of semiconductor devices: linear power mosfet, Reverse recovery time: 1.83µs, кількість в упаковці: 1 шт.
Інші пропозиції IXTX17N120L
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTX17N120L | Виробник : IXYS | Description: MOSFET N-CH 1200V 17A PLUS247 |
товар відсутній |
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IXTX17N120L | Виробник : IXYS | MOSFET 17 Amps 1200V |
товар відсутній |
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IXTX17N120L | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; PLUS247™; 1.83us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 17A Power dissipation: 700W Case: PLUS247™ On-state resistance: 0.9Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1.83µs |
товар відсутній |