Технічний опис IXTX22N100L Littelfuse
Description: MOSFET N-CH 1000V 22A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V.
Інші пропозиції IXTX22N100L
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IXTX22N100L | Виробник : Littelfuse |
 Trans MOSFET N-CH 1KV 22A 3-Pin(3+Tab) PLUS 247 |
товару немає в наявності |
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IXTX22N100L | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 700W Case: PLUS247™ On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs кількість в упаковці: 1 шт |
товару немає в наявності |
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IXTX22N100L | Виробник : IXYS |
Description: MOSFET N-CH 1000V 22A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V |
товару немає в наявності |
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IXTX22N100L | Виробник : IXYS |
MOSFETs LINEAR PWR MOSFET N-CHAN 1000V 22A |
товару немає в наявності |
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IXTX22N100L | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 22A Power dissipation: 700W Case: PLUS247™ On-state resistance: 0.6Ω Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
товару немає в наявності |