Технічний опис IXTX24N100 Littelfuse
Description: MOSFET N-CH 1000V 24A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V, Power Dissipation (Max): 568W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V.
Інші пропозиції IXTX24N100
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IXTX24N100 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.4Ω Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 850ns кількість в упаковці: 1 шт |
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IXTX24N100 | Виробник : IXYS |
Description: MOSFET N-CH 1000V 24A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
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IXTX24N100 | Виробник : IXYS |
MOSFET 24 Amps 1000V |
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IXTX24N100 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 24A; 568W; PLUS247™; 850ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 24A Power dissipation: 568W Case: PLUS247™ On-state resistance: 0.4Ω Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 850ns |
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