| Кількість | Ціна |
|---|---|
| 1+ | 1556.42 грн |
| 10+ | 1439.56 грн |
| 30+ | 1106.92 грн |
| 60+ | 1087.23 грн |
| 120+ | 1036.60 грн |
| 270+ | 997.92 грн |
| 510+ | 889.62 грн |
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Технічний опис IXTX32P60P IXYS
Description: MOSFET P-CH 600V 32A PLUS247-3, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 890W (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V.
Інші пропозиції IXTX32P60P за ціною від 1011.78 грн до 1588.65 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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IXTX32P60P | Littelfuse Inc. |
 Description: MOSFET P-CH 600V 32A PLUS247-3Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PLUS247™-3 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V |
на замовлення 431 шт: термін постачання 21-31 дні (днів) |
|
| IXTX32P60P |
|
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 600V 32A PLUS247-3
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Description: MOSFET P-CH 600V 32A PLUS247-3
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
на замовлення 431 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1588.65 грн |
| 30+ | 1156.50 грн |
| 120+ | 1011.78 грн |