IXTX46N50L IXYS
Виробник: IXYS
Description: MOSFET N-CH 500V 46A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3928.91 грн |
| 30+ | 2576.23 грн |
| 60+ | 2522.46 грн |
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Технічний опис IXTX46N50L IXYS
Description: MOSFET N-CH 500V 46A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 6V @ 250µA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V.
Інші пропозиції IXTX46N50L
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXTX46N50L | IXYS |
MOSFETs 44 Amps 500V |
товару немає в наявності |
В кошику од. на суму грн. |
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IXTX46N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; PLUS247™; 600ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Power dissipation: 700W Case: PLUS247™ On-state resistance: 0.16Ω Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.6µs |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTX46N50L |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; PLUS247™; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; 700W; PLUS247™; 600ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.6µs
товару немає в наявності
В кошику
од. на суму грн.