IXTX600N04T2 IXYS
Виробник: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: PLUS247™
Drain current: 600A
On-state resistance: 1.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25kW
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 590nC
Kind of channel: enhanced
Reverse recovery time: 100ns
Drain-source voltage: 40V
кількість в упаковці: 1 шт
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Технічний опис IXTX600N04T2 IXYS
Description: MOSFET N-CH 40V 600A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 600A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V.
Інші пропозиції IXTX600N04T2
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IXTX600N04T2 | Виробник : IXYS |
Description: MOSFET N-CH 40V 600A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 590 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V |
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IXTX600N04T2 | Виробник : IXYS |
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IXTX600N04T2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: PLUS247™ Drain current: 600A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.25kW Features of semiconductor devices: thrench gate power mosfet Gate charge: 590nC Kind of channel: enhanced Reverse recovery time: 100ns Drain-source voltage: 40V |
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