на замовлення 290 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2706.61 грн |
| 10+ | 2533.59 грн |
| 30+ | 1943.42 грн |
| 120+ | 1821.92 грн |
| 510+ | 1703.08 грн |
| 1020+ | 1697.74 грн |
| 2520+ | 1695.74 грн |
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Технічний опис IXTX90N25L2 IXYS
Description: MOSFET N-CH 250V 90A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3mA, Supplier Device Package: PLUS247™-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V.
Інші пропозиції IXTX90N25L2
| Фото | Назва | Виробник | Інформація |
Доступність |
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IXTX90N25L2 | Виробник : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 90A Power dissipation: 960W Case: PLUS247™ On-state resistance: 36mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 266ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTX90N25L2 | Виробник : IXYS |
Description: MOSFET N-CH 250V 90A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 640 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V |
товар відсутній |
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IXTX90N25L2 | Виробник : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 90A Power dissipation: 960W Case: PLUS247™ On-state resistance: 36mΩ Mounting: THT Gate charge: 640nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 266ns |
товар відсутній |