IXTY01N100 IXYS
Виробник: IXYS
Description: MOSFET N-CH 1000V 100MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V
Description: MOSFET N-CH 1000V 100MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V
на замовлення 21969 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 183.43 грн |
70+ | 141.89 грн |
140+ | 116.75 грн |
560+ | 92.71 грн |
1050+ | 78.66 грн |
2030+ | 74.73 грн |
5040+ | 70.74 грн |
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Технічний опис IXTY01N100 IXYS
Description: MOSFET N-CH 1000V 100MA TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Tc), Rds On (Max) @ Id, Vgs: 80Ohm @ 100mA, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V.
Інші пропозиції IXTY01N100 за ціною від 83.45 грн до 198.61 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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IXTY01N100 | Виробник : IXYS | MOSFET 0.1 Amps 1000V 80 Rds |
на замовлення 140 шт: термін постачання 21-30 дні (днів) |
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IXTY01N100 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Mounting: SMD Power dissipation: 25W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.1A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω кількість в упаковці: 1 шт |
товар відсутній |
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IXTY01N100 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252 Mounting: SMD Power dissipation: 25W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Drain current: 0.1A Kind of channel: enhanced Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω |
товар відсутній |