IXTY01N100D IXYS
Виробник: IXYS
Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 5999 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 255.65 грн |
70+ | 194.67 грн |
140+ | 166.86 грн |
560+ | 139.2 грн |
1050+ | 119.19 грн |
2030+ | 112.23 грн |
5040+ | 105.9 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTY01N100D IXYS
Description: MOSFET N-CH 1000V 400MA TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Tc), Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.1W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 25µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V.
Інші пропозиції IXTY01N100D за ціною від 142.87 грн до 276.5 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXTY01N100D | Виробник : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXTY01N100D - Leistungs-MOSFET, n-Kanal, 1 kV, 400 mA, 50 ohm, TO-252, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 25W Bauform - Transistor: TO-252 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 0V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 50ohm |
на замовлення 233 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
IXTY01N100D | Виробник : IXYS | MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25 |
на замовлення 350 шт: термін постачання 399-408 дні (днів) |
|
|||||||||||||||
IXTY01N100D | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns Mounting: SMD Power dissipation: 25W Gate charge: 0.1µC Polarisation: unipolar Drain current: 0.1A Kind of channel: depleted Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω Reverse recovery time: 2ns кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
IXTY01N100D | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO252; 2ns Mounting: SMD Power dissipation: 25W Gate charge: 0.1µC Polarisation: unipolar Drain current: 0.1A Kind of channel: depleted Drain-source voltage: 1kV Type of transistor: N-MOSFET Kind of package: tube Case: TO252 On-state resistance: 80Ω Reverse recovery time: 2ns |
товар відсутній |