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IXTY02N120P-TRL

IXTY02N120P-TRL IXYS


littelfuse-discrete-mosfets-ixt-02n120p-datasheet?assetguid=28c53e8f-de75-400b-95e2-28ff1adfa0e0 Виробник: IXYS
Description: MOSFET N-CH 1200V 200MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
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Технічний опис IXTY02N120P-TRL IXYS

Description: MOSFET N-CH 1200V 200MA TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V.

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IXTY02N120P-TRL IXTY02N120P-TRL Виробник : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_02N120P_Datasheet.PDF MOSFET Modules IXTY02N120P TRL
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