Технічний опис IXTY08N100D2-TRL Littelfuse
Description: MOSFET N-CH 1000V 800MA TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tj), Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.
Інші пропозиції IXTY08N100D2-TRL
Фото | Назва | Виробник | Інформація |
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IXTY08N100D2-TRL | Виробник : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 800MA TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
товару немає в наявності |
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IXTY08N100D2-TRL | Виробник : IXYS |
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товару немає в наявності |