IXTY08N100P IXYS
Виробник: IXYS
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 223.64 грн |
70+ | 170.54 грн |
140+ | 146.18 грн |
560+ | 121.94 грн |
1050+ | 104.41 грн |
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Технічний опис IXTY08N100P IXYS
Description: MOSFET N-CH 1000V 800MA TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 50µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
Інші пропозиції IXTY08N100P за ціною від 145.31 грн до 242.74 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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IXTY08N100P | Виробник : IXYS | MOSFET 0.8 Amps 1000V 20 Rds |
на замовлення 1610 шт: термін постачання 21-30 дні (днів) |
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IXTY08N100P | Виробник : Littelfuse | Trans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) DPAK |
товар відсутній |
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IXTY08N100P | Виробник : Littelfuse | Trans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) DPAK |
товар відсутній |
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IXTY08N100P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns Mounting: SMD Case: TO252 Kind of package: tube Power dissipation: 42W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 750ns Drain-source voltage: 1kV Drain current: 0.8A On-state resistance: 20Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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IXTY08N100P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 42W; TO252; 750ns Mounting: SMD Case: TO252 Kind of package: tube Power dissipation: 42W Polarisation: unipolar Features of semiconductor devices: standard power mosfet Kind of channel: enhanced Reverse recovery time: 750ns Drain-source voltage: 1kV Drain current: 0.8A On-state resistance: 20Ω Type of transistor: N-MOSFET |
товар відсутній |