Технічний опис IXTY10P15T IXYS
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252, Type of transistor: P-MOSFET, Technology: TrenchP™, Power dissipation: 83W, Case: TO252, Mounting: SMD, Gate charge: 36nC, Kind of package: tube, Kind of channel: enhancement, Polarisation: unipolar, Drain-source voltage: -150V, Drain current: -10A, Gate-source voltage: ±15V, Reverse recovery time: 120ns, On-state resistance: 0.35Ω.
Інші пропозиції IXTY10P15T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IXTY10P15T | IXYS |
Description: MOSFET P-CH 150V 10A TO-252 |
товару немає в наявності |
В кошику од. на суму грн. |
|
IXTY10P15T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Power dissipation: 83W Case: TO252 Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement Polarisation: unipolar Drain-source voltage: -150V Drain current: -10A Gate-source voltage: ±15V Reverse recovery time: 120ns On-state resistance: 0.35Ω |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTY10P15T |
![]() |
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO-252
Description: MOSFET P-CH 150V 10A TO-252
товару немає в наявності
В кошику
од. на суму грн.
| IXTY10P15T |
![]() |
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Gate-source voltage: ±15V
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Power dissipation: 83W
Case: TO252
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Gate-source voltage: ±15V
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
товару немає в наявності
В кошику
од. на суму грн.




