IXTY18P10T-TRL Littelfuse Inc.
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 18A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис IXTY18P10T-TRL Littelfuse Inc.
Description: MOSFET P-CH 100V 18A TO252, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IXTY18P10T-TRL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IXTY18P10T-TRL | Виробник : IXYS |
 Discrete Semiconductor Modules DISCRETE |
товару немає в наявності |
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| IXTY18P10T-TRL | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 100V; 18A; 83W; DPAK,TO252AA Type of transistor: P-MOSFET Power dissipation: 83W Case: DPAK; TO252AA Mounting: SMD Kind of channel: enhancement Drain-source voltage: 100V Drain current: 18A Gate-source voltage: 15V On-state resistance: 0.12Ω |
товару немає в наявності |