Технічний опис IXTY1R4N100P Littelfuse
Description: MOSFET N-CH 1000V 1.4A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Інші пропозиції IXTY1R4N100P
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXTY1R4N100P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 63W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11.8Ω Mounting: SMD Gate charge: 17.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns кількість в упаковці: 1 шт |
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IXTY1R4N100P | Виробник : IXYS |
Description: MOSFET N-CH 1000V 1.4A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
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IXTY1R4N100P | Виробник : IXYS | MOSFET 1.4 Amps 1000V 11 Rds |
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IXTY1R4N100P | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.4A Pulsed drain current: 3A Power dissipation: 63W Case: TO252 Gate-source voltage: ±20V On-state resistance: 11.8Ω Mounting: SMD Gate charge: 17.8nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 750ns |
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