| Кількість | Ціна |
|---|---|
| 2+ | 269.93 грн |
| 10+ | 224.02 грн |
| 25+ | 183.55 грн |
| 100+ | 157.53 грн |
| 250+ | 148.39 грн |
| 500+ | 139.95 грн |
| 1000+ | 132.92 грн |
Відгуки про товар
Написати відгук
Технічний опис IXTY1R6N100D2-TRL IXYS
Description: MOSFET N-CH 1000V 1.6A TO252, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IXTY1R6N100D2-TRL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IXTY1R6N100D2-TRL | IXYS |
Description: MOSFET N-CH 1000V 1.6A TO252 Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 0V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTY1R6N100D2-TRL |
Виробник: IXYS
Description: MOSFET N-CH 1000V 1.6A TO252
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 1000V 1.6A TO252
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.