на замовлення 2838 шт:
термін постачання 460-469 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.61 грн |
| 25+ | 199.88 грн |
| 70+ | 149.17 грн |
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Технічний опис IXTY1R6N50D2 IXYS
Description: MOSFET N-CH 500V 1.6A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 100W (Tc), Supplier Device Package: TO-252AA, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V.
Інші пропозиції IXTY1R6N50D2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXTY1R6N50D2 | Виробник : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.6A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 23.7nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 400ns кількість в упаковці: 1 шт |
товар відсутній |
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IXTY1R6N50D2 | Виробник : IXYS |
Description: MOSFET N-CH 500V 1.6A TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
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IXTY1R6N50D2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 1.6A; 100W; TO252; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 1.6A Power dissipation: 100W Case: TO252 Gate-source voltage: ±20V On-state resistance: 2.3Ω Mounting: SMD Gate charge: 23.7nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 400ns |
товар відсутній |