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Технічний опис IXTY26P10T IXYS
Description: MOSFET P-CH 100V 26A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V.
Інші пропозиції IXTY26P10T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IXTY26P10T | IXYS |
 Description: MOSFET P-CH 100V 26A TO252Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V |
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 |
IXTY26P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252 Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO252 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Kind of package: tube Reverse recovery time: 70ns Gate charge: 52nC Polarisation: unipolar Technology: TrenchP™ |
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 |
IXTY26P10T | LITTELFUSE |
Description: LITTELFUSE - IXTY26P10T - Leistungs-MOSFET, p-Kanal, 100 V, 26 A, 0.09 ohm, TO-252 (DPAK), Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 26 Qualifikation: - Gate-Source-Schwellenspannung, max.: 4.5 Verlustleistung: 150 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3 Produktpalette: TrenchP Series Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.09 SVHC: No SVHC (10-Jun-2022) |
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| IXTY26P10T |
|
Виробник: IXYS
Description: MOSFET P-CH 100V 26A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Description: MOSFET P-CH 100V 26A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXTY26P10T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
товару немає в наявності
В кошику
од. на суму грн.
| IXTY26P10T |
|
Виробник: LITTELFUSE
Description: LITTELFUSE - IXTY26P10T - Leistungs-MOSFET, p-Kanal, 100 V, 26 A, 0.09 ohm, TO-252 (DPAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 26
Qualifikation: -
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 150
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3
Produktpalette: TrenchP Series
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.09
SVHC: No SVHC (10-Jun-2022)
Description: LITTELFUSE - IXTY26P10T - Leistungs-MOSFET, p-Kanal, 100 V, 26 A, 0.09 ohm, TO-252 (DPAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 26
Qualifikation: -
Gate-Source-Schwellenspannung, max.: 4.5
Verlustleistung: 150
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3
Produktpalette: TrenchP Series
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.09
SVHC: No SVHC (10-Jun-2022)
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В кошику
од. на суму грн.