Технічний опис IXTY32P05T Littelfuse
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252, Type of transistor: P-MOSFET, Technology: TrenchP™, Polarisation: unipolar, Drain-source voltage: -50V, Drain current: -32A, Power dissipation: 83W, Case: TO252, Gate-source voltage: ±15V, On-state resistance: 39mΩ, Mounting: SMD, Gate charge: 46nC, Kind of package: tube, Kind of channel: enhanced, Reverse recovery time: 26ns, кількість в упаковці: 1 шт.
Інші пропозиції IXTY32P05T
| Фото | Назва | Виробник | Інформація |
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IXTY32P05T | Виробник : IXYS |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -32A Power dissipation: 83W Case: TO252 Gate-source voltage: ±15V On-state resistance: 39mΩ Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 26ns кількість в упаковці: 1 шт |
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IXTY32P05T | Виробник : IXYS |
Description: MOSFET P-CH 50V 32A TO-252 |
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IXTY32P05T | Виробник : IXYS |
MOSFET TrenchP Power MOSFET |
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IXTY32P05T | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -32A; 83W; TO252 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -50V Drain current: -32A Power dissipation: 83W Case: TO252 Gate-source voltage: ±15V On-state resistance: 39mΩ Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 26ns |
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