IXXA50N60B3

IXXA50N60B3 Littelfuse


littelfuse_discrete_igbts_xpt_ixx_50n60b3_datasheet.pdf.pdf Виробник: Littelfuse
Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(2+Tab) TO-263AA
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Технічний опис IXXA50N60B3 Littelfuse

Description: IGBT, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A, Supplier Device Package: TO-263AA, Td (on/off) @ 25°C: 27ns/150ns, Switching Energy: 670µJ (on), 1.2mJ (off), Test Condition: 360V, 36A, 5Ohm, 15V, Gate Charge: 70 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 600 W.

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IXXA50N60B3 IXXA50N60B3 Виробник : IXYS IXXA(p,h)50N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
товар відсутній
IXXA50N60B3 IXXA50N60B3 Виробник : IXYS littelfuse_discrete_igbts_xpt_ixx_50n60b3_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
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IXXA50N60B3 IXXA50N60B3 Виробник : IXYS media-3319329.pdf IGBT Transistors IGBT XPT-GENX3
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IXXA50N60B3 IXXA50N60B3 Виробник : IXYS IXXA(p,h)50N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
товар відсутній