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IXXH110N65B4 IXYS


media?resourcetype=datasheets&itemid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f&filename=littelfuse_discrete_igbts_xpt_ixxh110n65b4_datasheet.pdf Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/146ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 570 A
Power - Max: 880 W
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Технічний опис IXXH110N65B4 IXYS

Description: DISC IGBT XPT-GENX4 TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, Supplier Device Package: TO-247 (IXTH), IGBT Type: PT, Td (on/off) @ 25°C: 26ns/146ns, Switching Energy: 2.2mJ (on), 1.05mJ (off), Test Condition: 400V, 55A, 2Ohm, 15V, Gate Charge: 183 nC, Part Status: Active, Current - Collector (Ic) (Max): 250 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 570 A, Power - Max: 880 W.

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IXXH110N65B4 IXXH110N65B4 Виробник : IXYS media-3319536.pdf IGBT Transistors IGBT XPT-GENX4
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