IXXH140N65B4 IXYS
Виробник: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
кількість в упаковці: 1 шт
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Технічний опис IXXH140N65B4 IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A, Supplier Device Package: TO-247 (IXTH), IGBT Type: PT, Td (on/off) @ 25°C: 54ns/270ns, Switching Energy: 5.75mJ (on), 2.67mJ (off), Test Condition: 400V, 100A, 4.7Ohm, 15V, Gate Charge: 250 nC, Current - Collector (Ic) (Max): 340 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 840 A, Power - Max: 1200 W.
Інші пропозиції IXXH140N65B4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IXXH140N65B4 | Виробник : IXYS |
Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 54ns/270ns Switching Energy: 5.75mJ (on), 2.67mJ (off) Test Condition: 400V, 100A, 4.7Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1200 W |
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IXXH140N65B4 | Виробник : IXYS |
IGBT Transistors IGBT XPT-GENX4 |
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IXXH140N65B4 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 128ns Turn-off time: 340ns |
товар відсутній |