Технічний опис IXXH140N65C4 Littelfuse
Description: DISC IGBT XPT-GENX4 TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A, Supplier Device Package: TO-247 (IXTH), IGBT Type: PT, Td (on/off) @ 25°C: 43ns/240ns, Switching Energy: 4.9mJ (on), 1.7mJ (off), Test Condition: 400V, 75A, 4.7Ohm, 15V, Gate Charge: 250 nC, Current - Collector (Ic) (Max): 320 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 730 A, Power - Max: 1200 W.
Інші пропозиції IXXH140N65C4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXXH140N65C4 | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 730A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 114ns Turn-off time: 273ns Technology: GenX4™; Trench; XPT™ кількість в упаковці: 1 шт |
товару немає в наявності |
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| IXXH140N65C4 | Виробник : IXYS |
Description: DISC IGBT XPT-GENX4 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 43ns/240ns Switching Energy: 4.9mJ (on), 1.7mJ (off) Test Condition: 400V, 75A, 4.7Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 320 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 730 A Power - Max: 1200 W |
товару немає в наявності |
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IXXH140N65C4 | Виробник : IXYS |
IGBTs TO247 650V 320A IGBT |
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IXXH140N65C4 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 730A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 114ns Turn-off time: 273ns Technology: GenX4™; Trench; XPT™ |
товару немає в наявності |