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Технічний опис IXXH30N65C4D1 IXYS
Category: THT IGBT transistors, Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3, Type of transistor: IGBT, Technology: GenX4™; Trench; XPT™, Power dissipation: 230W, Case: TO247-3, Mounting: THT, Gate charge: 47nC, Kind of package: tube, Collector current: 30A, Collector-emitter voltage: 650V, Pulsed collector current: 136A, Turn-on time: 65ns, Turn-off time: 161ns, Gate-emitter voltage: ±20V.
Інші пропозиції IXXH30N65C4D1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXXH30N65C4D1 | IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 230W Case: TO247-3 Mounting: THT Gate charge: 47nC Kind of package: tube Collector current: 30A Collector-emitter voltage: 650V Pulsed collector current: 136A Turn-on time: 65ns Turn-off time: 161ns Gate-emitter voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXXH30N65C4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 136A
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.