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IXXH40N65B4H1

IXXH40N65B4H1 Littelfuse


media.pdf Виробник: Littelfuse
Trans IGBT Chip N-CH 650V 120A 455W 3-Pin(3+Tab) TO-247AD
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Технічний опис IXXH40N65B4H1 Littelfuse

Description: IGBT 650V 120A 455W TO247AD, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 120 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 28ns/144ns, Switching Energy: 1.4mJ (on), 560µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 77 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 455 W.

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IXXH40N65B4H1 IXXH40N65B4H1 Виробник : IXYS IXXH40N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
кількість в упаковці: 1 шт
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IXXH40N65B4H1 IXXH40N65B4H1 Виробник : IXYS littelfuse_discrete_igbts_xpt_ixxh40n65b4h1_datasheet.pdf.pdf Description: IGBT 650V 120A 455W TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/144ns
Switching Energy: 1.4mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 455 W
товар відсутній
IXXH40N65B4H1 IXXH40N65B4H1 Виробник : IXYS media-3319196.pdf IGBT Transistors IGBT XPT-GENX4
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IXXH40N65B4H1 IXXH40N65B4H1 Виробник : IXYS IXXH40N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
товар відсутній