IXXH60N65B4H1 IXYS
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 536W
Gate charge: 86nC
Technology: GenX4™; Trench; XPT™
Pulsed collector current: 265A
Turn-on time: 94ns
Turn-off time: 208ns
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 846.56 грн |
| 3+ | 737.90 грн |
| 30+ | 650.65 грн |
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Технічний опис IXXH60N65B4H1 IXYS
Description: IGBT PT 650V 116A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 150 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 37ns/145ns, Switching Energy: 3.13mJ (on), 1.15mJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 95 nC, Part Status: Active, Current - Collector (Ic) (Max): 116 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 230 A, Power - Max: 380 W.
Інші пропозиції IXXH60N65B4H1 за ціною від 626.19 грн до 1063.21 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
|
IXXH60N65B4H1 | IXYS |
Description: IGBT PT 650V 116A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 150 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 37ns/145ns Switching Energy: 3.13mJ (on), 1.15mJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 116 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 230 A Power - Max: 380 W |
на замовлення 51 шт: термін постачання 21-31 дні (днів) |
|
| IXXH60N65B4H1 |
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Виробник: IXYS
Description: IGBT PT 650V 116A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
Description: IGBT PT 650V 116A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 37ns/145ns
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 380 W
на замовлення 51 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1063.21 грн |
| 30+ | 626.19 грн |



