Технічний опис IXXH60N65C4 Littelfuse
Description: IGBT 650V 118A 455W TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 37ns/133ns, Switching Energy: 3.2mJ (on), 830µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 94 nC, Current - Collector (Ic) (Max): 118 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 455 W.
Інші пропозиції IXXH60N65C4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXXH60N65C4 | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 110ns Turn-off time: 164ns кількість в упаковці: 1 шт |
товар відсутній |
|
.jpg "IXXH60N65C4") |
IXXH60N65C4 | Виробник : IXYS |
Description: IGBT 650V 118A 455W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 37ns/133ns Switching Energy: 3.2mJ (on), 830µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 94 nC Current - Collector (Ic) (Max): 118 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 455 W |
товар відсутній |
|
 |
IXXH60N65C4 | Виробник : IXYS |
IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT |
товар відсутній |
|
|
|
IXXH60N65C4 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 260A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 110ns Turn-off time: 164ns |
товар відсутній |