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IXXH75N60B3 IXYS


media?resourcetype=datasheets&itemid=65b0869f-7d80-4345-86e6-e47e8d0b05bf&filename=littelfuse_discrete_igbts_xpt_ixxh75n60b3_datasheet.pdf Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
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Технічний опис IXXH75N60B3 IXYS

Description: DISC IGBT XPT-GENX3 TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 35ns/118ns, Switching Energy: 1.7mJ (on), 1.5mJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 107 nC, Part Status: Active, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 750 W.

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IXXH75N60B3 IXXH75N60B3 Виробник : IXYS media-3321129.pdf IGBT Transistors IGBT XPT-GENX3
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