Технічний опис IXXH75N60C3D1 Littelfuse
Description: IGBT PT 600V 150A TO-247AD, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 35ns/90ns, Switching Energy: 1.6mJ (on), 800µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 107 nC, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 750 W.
Інші пропозиції IXXH75N60C3D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXXH75N60C3D1 | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 750W Case: TO247-3 Mounting: THT Gate charge: 107nC Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 105ns Turn-off time: 185ns кількість в упаковці: 1 шт |
товару немає в наявності |
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IXXH75N60C3D1 | Виробник : IXYS |
Description: IGBT PT 600V 150A TO-247AD Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 35ns/90ns Switching Energy: 1.6mJ (on), 800µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 107 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 750 W |
товару немає в наявності |
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IXXH75N60C3D1 | Виробник : IXYS |
IGBTs TO247 600V 75A XPT |
товару немає в наявності |
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IXXH75N60C3D1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 750W Case: TO247-3 Mounting: THT Gate charge: 107nC Kind of package: tube Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 300A Turn-on time: 105ns Turn-off time: 185ns |
товару немає в наявності |