Технічний опис IXXH80N65B4D1 IXYS
Description: IGBT PT 650V 180A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 26ns/112ns, Switching Energy: 3.36mJ (on), 1.83mJ (off), Test Condition: 400V, 80A, 3Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 180 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 430 A, Power - Max: 625 W.
Інші пропозиції IXXH80N65B4D1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXXH80N65B4D1 | IXYS |
 Description: IGBT PT 650V 180A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A Supplier Device Package: TO-247AD (IXXH) IGBT Type: PT Td (on/off) @ 25°C: 26ns/112ns Switching Energy: 3.36mJ (on), 1.83mJ (off) Test Condition: 400V, 80A, 3Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 180 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 430 A Power - Max: 625 W |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
 |
IXXH80N65B4D1 | IXYS |
IGBTs Disc IGBT XPT-GenX4 TO-247AD |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXXH80N65B4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 625W Case: TO247-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 125ns Turn-off time: 222ns Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 430A |
товару немає в наявності |
В кошику од. на суму грн. |
| IXXH80N65B4D1 |
|
Виробник: IXYS
Description: IGBT PT 650V 180A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/112ns
Switching Energy: 3.36mJ (on), 1.83mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
Description: IGBT PT 650V 180A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/112ns
Switching Energy: 3.36mJ (on), 1.83mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| IXXH80N65B4D1 |
|
Виробник: IXYS
IGBTs Disc IGBT XPT-GenX4 TO-247AD
IGBTs Disc IGBT XPT-GenX4 TO-247AD
товару немає в наявності
В кошику
од. на суму грн.
| IXXH80N65B4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
товару немає в наявності
В кошику
од. на суму грн.