Технічний опис IXXK200N60B3 Littelfuse
Description: IGBT 600V 380A 1630W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, Supplier Device Package: TO-264 (IXXK), IGBT Type: PT, Td (on/off) @ 25°C: 48ns/160ns, Switching Energy: 2.85mJ (on), 2.9mJ (off), Test Condition: 360V, 100A, 1Ohm, 15V, Gate Charge: 315 nC, Part Status: Active, Current - Collector (Ic) (Max): 380 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 900 A, Power - Max: 1630 W.
Інші пропозиції IXXK200N60B3
| Фото | Назва | Виробник | Інформація |
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IXXK200N60B3 | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Gate charge: 315nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 900A Type of transistor: IGBT Turn-on time: 140ns Kind of package: tube Case: TO264 Turn-off time: 395ns Gate-emitter voltage: ±20V Collector current: 200A Collector-emitter voltage: 600V Power dissipation: 1.63kW кількість в упаковці: 1 шт |
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IXXK200N60B3 | Виробник : IXYS |
Description: IGBT 600V 380A 1630W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 48ns/160ns Switching Energy: 2.85mJ (on), 2.9mJ (off) Test Condition: 360V, 100A, 1Ohm, 15V Gate Charge: 315 nC Part Status: Active Current - Collector (Ic) (Max): 380 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 900 A Power - Max: 1630 W |
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IXXK200N60B3 | Виробник : IXYS |
IGBT Transistors GenX3 XPT 600V |
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IXXK200N60B3 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264 Mounting: THT Gate charge: 315nC Technology: GenX3™; Planar; XPT™ Pulsed collector current: 900A Type of transistor: IGBT Turn-on time: 140ns Kind of package: tube Case: TO264 Turn-off time: 395ns Gate-emitter voltage: ±20V Collector current: 200A Collector-emitter voltage: 600V Power dissipation: 1.63kW |
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