Технічний опис IXXN200N60B3H1 Littelfuse
Description: IGBT MOD 600V 200A 780W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 780 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V.
Інші пропозиції IXXN200N60B3H1
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IXXN200N60B3H1 | Виробник : IXYS |
 Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W Pulsed collector current: 1kA Power dissipation: 780W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 98A кількість в упаковці: 1 шт |
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IXXN200N60B3H1 | Виробник : IXYS |
Description: IGBT MOD 600V 200A 780W SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 780 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V |
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IXXN200N60B3H1 | Виробник : IXYS |
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT |
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IXXN200N60B3H1 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 98A; SOT227B; 780W Pulsed collector current: 1kA Power dissipation: 780W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 98A |
товар відсутній |