IXXP12N65B4D1 IXYS
Виробник: IXYS
Description: IGBT 650V 38A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 13ns/158ns
Switching Energy: 440µJ (on), 220µJ (off)
Test Condition: 400V, 12A, 20Ohm, 15V
Gate Charge: 34 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 160 W
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Технічний опис IXXP12N65B4D1 IXYS
Description: IGBT 650V 38A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 13ns/158ns, Switching Energy: 440µJ (on), 220µJ (off), Test Condition: 400V, 12A, 20Ohm, 15V, Gate Charge: 34 nC, Part Status: Active, Current - Collector (Ic) (Max): 38 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 70 A, Power - Max: 160 W.
Інші пропозиції IXXP12N65B4D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXXP12N65B4D1 | IXYS |
IGBTs Disc IGBT XPT-GenX4 TO-220AB/FP |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXXP12N65B4D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 34nC Turn-on time: 44ns Turn-off time: 245ns Collector current: 12A Gate-emitter voltage: ±20V Pulsed collector current: 70A Collector-emitter voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. |
| IXXP12N65B4D1 |
|
Виробник: IXYS
IGBTs Disc IGBT XPT-GenX4 TO-220AB/FP
IGBTs Disc IGBT XPT-GenX4 TO-220AB/FP
товару немає в наявності
В кошику
од. на суму грн.
| IXXP12N65B4D1 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 34nC
Turn-on time: 44ns
Turn-off time: 245ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 34nC
Turn-on time: 44ns
Turn-off time: 245ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Collector-emitter voltage: 650V
товару немає в наявності
В кошику
од. на суму грн.