Технічний опис IXXP12N65B4D1 Littelfuse
Description: IGBT 650V 38A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 13ns/158ns, Switching Energy: 440µJ (on), 220µJ (off), Test Condition: 400V, 12A, 20Ohm, 15V, Gate Charge: 34 nC, Part Status: Active, Current - Collector (Ic) (Max): 38 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 70 A, Power - Max: 160 W.
Інші пропозиції IXXP12N65B4D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXXP12N65B4D1 | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 70A Turn-on time: 44ns Turn-off time: 245ns Gate charge: 34nC кількість в упаковці: 1 шт |
товару немає в наявності |
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IXXP12N65B4D1 | Виробник : IXYS |
Description: IGBT 650V 38A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 13ns/158ns Switching Energy: 440µJ (on), 220µJ (off) Test Condition: 400V, 12A, 20Ohm, 15V Gate Charge: 34 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 70 A Power - Max: 160 W |
товару немає в наявності |
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IXXP12N65B4D1 | Виробник : IXYS |
IGBTs Disc IGBT XPT-GenX4 TO-220AB/FP |
товару немає в наявності |
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IXXP12N65B4D1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 160W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 12A Pulsed collector current: 70A Turn-on time: 44ns Turn-off time: 245ns Gate charge: 34nC |
товару немає в наявності |