IXXP50N60B3 IXYS
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
кількість в упаковці: 1 шт
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Технічний опис IXXP50N60B3 IXYS
Description: IGBT, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 27ns/150ns, Switching Energy: 670µJ (on), 1.2mJ (off), Test Condition: 360V, 36A, 5Ohm, 15V, Gate Charge: 70 nC, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 600 W.
Інші пропозиції IXXP50N60B3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXXP50N60B3 | Виробник : IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 27ns/150ns Switching Energy: 670µJ (on), 1.2mJ (off) Test Condition: 360V, 36A, 5Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 600 W |
товар відсутній |
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IXXP50N60B3 | Виробник : IXYS | IGBT Transistors IGBT XPT-GENX3 |
товар відсутній |
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IXXP50N60B3 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 600V Collector current: 50A Power dissipation: 600W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 70nC Kind of package: tube Turn-on time: 75ns Turn-off time: 320ns |
товар відсутній |