IXXQ30N60B3M IXYS
Виробник: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Power dissipation: 90W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 19A
Pulsed collector current: 140A
Turn-on time: 57ns
Turn-off time: 292ns
кількість в упаковці: 1 шт
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Технічний опис IXXQ30N60B3M IXYS
Description: IGBT 600V 33A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 36 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A, Supplier Device Package: TO-3P, Td (on/off) @ 25°C: 23ns/150ns, Switching Energy: 550µJ (on), 800µJ (off), Test Condition: 400V, 24A, 10Ohm, 15V, Gate Charge: 39 nC, Part Status: Active, Current - Collector (Ic) (Max): 33 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 140 A, Power - Max: 90 W.
Інші пропозиції IXXQ30N60B3M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXXQ30N60B3M | Виробник : IXYS |
Description: IGBT 600V 33A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 23ns/150ns Switching Energy: 550µJ (on), 800µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 39 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 140 A Power - Max: 90 W |
товару немає в наявності |
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IXXQ30N60B3M | Виробник : IXYS |
IGBTs TO3P 600V 19A IGBT |
товару немає в наявності |
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IXXQ30N60B3M | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF Type of transistor: IGBT Case: TO3PF Mounting: THT Kind of package: tube Power dissipation: 90W Gate charge: 39nC Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 19A Pulsed collector current: 140A Turn-on time: 57ns Turn-off time: 292ns |
товару немає в наявності |