IXXQ30N60B3M IXYS
Виробник: IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 23ns/150ns
Switching Energy: 550µJ (on), 800µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 90 W
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 355.14 грн |
| 10+ | 287.05 грн |
| 100+ | 232.18 грн |
| 500+ | 193.68 грн |
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Технічний опис IXXQ30N60B3M IXYS
Description: IGBT, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 36 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A, Supplier Device Package: TO-3P, Td (on/off) @ 25°C: 23ns/150ns, Switching Energy: 550µJ (on), 800µJ (off), Test Condition: 400V, 24A, 10Ohm, 15V, Gate Charge: 39 nC, Part Status: Active, Current - Collector (Ic) (Max): 33 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 140 A, Power - Max: 90 W.
Інші пропозиції IXXQ30N60B3M
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXXQ30N60B3M | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 90W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 57ns Turn-off time: 292ns кількість в упаковці: 1 шт |
товар відсутній |
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IXXQ30N60B3M | Виробник : IXYS |
IGBT Transistors IGBT XPT-GENX3 |
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IXXQ30N60B3M | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 90W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 140A Mounting: THT Gate charge: 39nC Kind of package: tube Turn-on time: 57ns Turn-off time: 292ns |
товар відсутній |