IXXX100N60B3H1 IXYS
Виробник: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; Planar; XPT™
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 370A
Turn-on time: 92ns
Turn-off time: 350ns
Type of transistor: IGBT
Power dissipation: 695W
Kind of package: tube
Gate charge: 143nC
Collector-emitter voltage: 600V
кількість в упаковці: 1 шт
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Технічний опис IXXX100N60B3H1 IXYS
Description: IGBT 600V 200A 695W TO247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 30ns/120ns, Switching Energy: 1.9mJ (on), 2mJ (off), Test Condition: 360V, 70A, 2Ohm, 15V, Gate Charge: 143 nC, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 440 A, Power - Max: 695 W.
Інші пропозиції IXXX100N60B3H1
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IXXX100N60B3H1 | Виробник : IXYS |
Description: IGBT 600V 200A 695W TO247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 30ns/120ns Switching Energy: 1.9mJ (on), 2mJ (off) Test Condition: 360V, 70A, 2Ohm, 15V Gate Charge: 143 nC Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 440 A Power - Max: 695 W |
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IXXX100N60B3H1 | Виробник : IXYS |
IGBT Transistors IGBT XPT-GENX3 |
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IXXX100N60B3H1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; Planar; XPT™ Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 370A Turn-on time: 92ns Turn-off time: 350ns Type of transistor: IGBT Power dissipation: 695W Kind of package: tube Gate charge: 143nC Collector-emitter voltage: 600V |
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