на замовлення 8 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1510.34 грн |
| 10+ | 1311.86 грн |
| 30+ | 1110.11 грн |
| 60+ | 1038.86 грн |
| 120+ | 1005.56 грн |
| 270+ | 919.66 грн |
| 510+ | 881.03 грн |
Відгуки про товар
Написати відгук
Технічний опис IXXX140N65B4H1 IXYS
Description: IGBT, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 54ns/270ns, Switching Energy: 5.75mJ (on), 2.67mJ (off), Test Condition: 400V, 100A, 4.7Ohm, 15V, Gate Charge: 250 nC, Current - Collector (Ic) (Max): 340 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 840 A, Power - Max: 1200 W.
Інші пропозиції IXXX140N65B4H1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXXX140N65B4H1 | Виробник : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 128ns Turn-off time: 340ns кількість в упаковці: 1 шт |
товар відсутній |
|
| IXXX140N65B4H1 | Виробник : IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 54ns/270ns Switching Energy: 5.75mJ (on), 2.67mJ (off) Test Condition: 400V, 100A, 4.7Ohm, 15V Gate Charge: 250 nC Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 840 A Power - Max: 1200 W |
товар відсутній |
||
|
|
IXXX140N65B4H1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 140A Power dissipation: 1.2kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 840A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 128ns Turn-off time: 340ns |
товар відсутній |