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Технічний опис IXXX160N65B4 IXYS
Description: IGBT PT 650V 310A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 52ns/220ns, Switching Energy: 3.3mJ (on), 1.88mJ (off), Test Condition: 400V, 80A, 1Ohm, 15V, Gate Charge: 425 nC, Part Status: Active, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 860 A, Power - Max: 940 W.
Інші пропозиції IXXX160N65B4 за ціною від 1070.59 грн до 1920.63 грн
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IXXX160N65B4 | Виробник : IXYS |
 Description: IGBT PT 650V 310A PLUS247Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A Supplier Device Package: PLUS247™-3 IGBT Type: PT Td (on/off) @ 25°C: 52ns/220ns Switching Energy: 3.3mJ (on), 1.88mJ (off) Test Condition: 400V, 80A, 1Ohm, 15V Gate Charge: 425 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 860 A Power - Max: 940 W |
на замовлення 1530 шт: термін постачання 21-31 дні (днів) |
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IXXX160N65B4 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™ Type of transistor: IGBT Case: PLUS247™ Mounting: THT Kind of package: tube Turn-off time: 380ns Gate-emitter voltage: ±20V Power dissipation: 940W Collector current: 160A Pulsed collector current: 860A Collector-emitter voltage: 650V Technology: GenX4™; Trench; XPT™ Gate charge: 425nC Turn-on time: 93ns |
товару немає в наявності |