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IXYA12N250CHV

IXYA12N250CHV IXYS


media?resourcetype=datasheets&itemid=12016a43-b4f8-4b18-a621-534e2a1ab70d&filename=littelfuse_discrete_igbts_xpt_ixy_12n250chv_datasheet.pdf Виробник: IXYS
Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
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Технічний опис IXYA12N250CHV IXYS

Description: DISC IGBT XPT-HI VOLTAGE TO-263D, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 16 ns, Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A, Supplier Device Package: TO-263HV, Td (on/off) @ 25°C: 12ns/167ns, Switching Energy: 3.56mJ (on), 1.7mJ (off), Test Condition: 1250V, 12A, 10Ohm, 15V, Gate Charge: 56 nC, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 310 W.

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IXYA12N250CHV Виробник : Littelfuse media-3319577.pdf IGBT Transistors IGBT XPT
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