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IXYA20N120C3HV

IXYA20N120C3HV Littelfuse


littelfuse_discrete_igbts_xpt_ixy_20n120c3_datasheet.pdf.pdf Виробник: Littelfuse
Trans IGBT Chip N-CH 1200V 40A 278000mW
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Технічний опис IXYA20N120C3HV Littelfuse

Description: IGBT, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 29 ns, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Supplier Device Package: TO-263HV, Td (on/off) @ 25°C: 20ns/90ns, Switching Energy: 1.3mJ (on), 1mJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 53 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 278 W.

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IXYA20N120C3HV IXYA20N120C3HV Виробник : IXYS IXY_20N120C3_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N120C3HV IXYA20N120C3HV Виробник : IXYS littelfuse_discrete_igbts_xpt_ixy_20n120c3_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYA20N120C3HV IXYA20N120C3HV Виробник : IXYS media-3320567.pdf IGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYA20N120C3HV IXYA20N120C3HV Виробник : IXYS IXY_20N120C3_HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
товар відсутній