IXYA20N65C3 IXYS
Виробник: IXYS
Description: IGBT 650V 20A TO-263AA
Power - Max: 230 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 30 nC
Test Condition: 400V, 20A, 20Ohm, 15V
Switching Energy: 430µJ (on), 650µJ (off)
Td (on/off) @ 25°C: 19ns/80ns
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Reverse Recovery Time (trr): 34 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис IXYA20N65C3 IXYS
Description: IGBT 650V 20A TO-263AA, Power - Max: 230 W, Current - Collector Pulsed (Icm): 105 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 20 A, Gate Charge: 30 nC, Test Condition: 400V, 20A, 20Ohm, 15V, Switching Energy: 430µJ (on), 650µJ (off), Td (on/off) @ 25°C: 19ns/80ns, Supplier Device Package: TO-263AA, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Reverse Recovery Time (trr): 34 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції IXYA20N65C3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXYA20N65C3 | IXYS |
IGBTs TO263 650V 20A XPT |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IXYA20N65C3 | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO263 Mounting: SMD Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 51ns Gate charge: 30nC Turn-off time: 132ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 105A |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYA20N65C3 |
|
Виробник: IXYS
IGBTs TO263 650V 20A XPT
IGBTs TO263 650V 20A XPT
товару немає в наявності
В кошику
од. на суму грн.
| IXYA20N65C3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
товару немає в наявності
В кошику
од. на суму грн.