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Технічний опис IXYA20N65C3 IXYS
Category: SMD IGBT transistors, Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263, Type of transistor: IGBT, Technology: GenX3™; Planar; XPT™, Collector-emitter voltage: 650V, Collector current: 20A, Power dissipation: 230W, Case: TO263, Gate-emitter voltage: ±20V, Mounting: SMD, Kind of package: tube, Pulsed collector current: 105A, Turn-on time: 51ns, Turn-off time: 132ns, Gate charge: 30nC.
Інші пропозиції IXYA20N65C3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IXYA20N65C3 | IXYS |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 230W Case: TO263 Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns Gate charge: 30nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IXYA20N65C3 |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
Gate charge: 30nC
товару немає в наявності
В кошику
од. на суму грн.