IXYA20N65C3 IXYS
Виробник: IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 30nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Collector current: 20A
Pulsed collector current: 105A
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
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Технічний опис IXYA20N65C3 IXYS
Description: IGBT 650V 20A TO-263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-263AA, Td (on/off) @ 25°C: 19ns/80ns, Switching Energy: 430µJ (on), 650µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 30 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 230 W.
Інші пропозиції IXYA20N65C3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IXYA20N65C3 | Виробник : IXYS |
Description: IGBT 650V 20A TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 650µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 230 W |
товару немає в наявності |
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IXYA20N65C3 | Виробник : IXYS |
IGBTs TO263 650V 20A XPT |
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IXYA20N65C3 | Виробник : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 30nC Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Collector current: 20A Pulsed collector current: 105A Turn-on time: 51ns Turn-off time: 132ns |
товару немає в наявності |