IXYA20N65C3D1 IXYS
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
| Кількість | Ціна |
|---|---|
| 2+ | 258.90 грн |
| 3+ | 215.86 грн |
| 10+ | 191.31 грн |
| 50+ | 171.84 грн |
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Технічний опис IXYA20N65C3D1 IXYS
Description: IGBT 650V 50A TO-263AA, Power - Max: 200 W, Current - Collector Pulsed (Icm): 105 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, Gate Charge: 30 nC, Test Condition: 400V, 20A, 20Ohm, 15V, Switching Energy: 430µJ (on), 650µJ (off), Td (on/off) @ 25°C: 19ns/80ns, Supplier Device Package: TO-263AA, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Reverse Recovery Time (trr): 34 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції IXYA20N65C3D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IXYA20N65C3D1 | IXYS |
Description: IGBT 650V 50A TO-263AA Switching Energy: 430µJ (on), 650µJ (off) Td (on/off) @ 25°C: 19ns/80ns Supplier Device Package: TO-263AA Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Reverse Recovery Time (trr): 34 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Power - Max: 200 W Current - Collector Pulsed (Icm): 105 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 50 A Gate Charge: 30 nC Test Condition: 400V, 20A, 20Ohm, 15V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| IXYA20N65C3D1 |
|
Виробник: IXYS
Description: IGBT 650V 50A TO-263AA
Switching Energy: 430µJ (on), 650µJ (off)
Td (on/off) @ 25°C: 19ns/80ns
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Reverse Recovery Time (trr): 34 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 200 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 30 nC
Test Condition: 400V, 20A, 20Ohm, 15V
Description: IGBT 650V 50A TO-263AA
Switching Energy: 430µJ (on), 650µJ (off)
Td (on/off) @ 25°C: 19ns/80ns
Supplier Device Package: TO-263AA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Reverse Recovery Time (trr): 34 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 200 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 30 nC
Test Condition: 400V, 20A, 20Ohm, 15V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.